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Han Jin-man, executive director of memory strategy marketing, Samsung Electronics
Samsung Electronics emphasized that it will solidify its number one position in the industry by introducing new technologies and roadmaps in the memory semiconductor field at the ‘2020 Investor Forum’, which was launched as a video recorded on the 1st. DRAM is expanding the application of extreme ultraviolet (EUV) processes. NAND Flash announced that it will be the first to introduce a dual-stack process based on single-stack technology that is ahead of its competitors.
“The competitiveness of Samsung Electronics ‘EUV process is one or two years ahead of other companies,” Han Jin-man, executive director of Samsung Electronics’ memory strategy marketing office, said at the forum. I have accumulated technical knowledge, ”he explained.
Samsung Electronics announced earlier this year that it applied the EUV process to 1x DRAM. Large-scale application begins with the 1z product. According to the industry, Samsung Electronics is known to apply the EUV process to a 1z DRAM layer. The experts noted that in 1a, the process of exposure to EUV will be done in four layers.
On this day, a managing director emphasized ‘Synergy with the Foundry Division’. Unlike rival DRAM makers SK Hynix and US Micron, Samsung Electronics may share EUV equipment with the foundry division. This means that the cost of introducing infrastructure, such as initial equipment, can be reduced considerably. That is why we have separate EUV production lines at the Hwaseong and Pyeongtaek plants. Researcher Jim Handy Objective Analysis (OA) also explained: “It is very inefficient to buy related equipment simply to apply the EUV process to one or two layers.”
Han explained that the defect rate (of the layer) was reduced by 20% when EUV was applied compared to ArF, which used the multi-pattern method. “If the last 10 years have been reducing the width of the circuit line using argon fluoride (ArF) exposure equipment, EUV is essential for the next 10 years,” Han said.
NAND Flash announced that it will use a technology called dual stack or dual stack of the seventh generation product. Double Stack is a technology that increases the number of layers by joining two 3D NAND flash chips (Die) that have been stacked together. Compared to the single stack method, which stacks cells in a single stack, the double stack has more processes and requires more materials. The cost increases. The reason for going double stack is that if more than a certain number of steps are stacked, twisting or bending occurs. It is also difficult to drill one hole at a time.
Samsung Electronics used single-stack technology up to the sixth-generation 128-layer product. Competitors have already applied dual-stack technology in the 90s or so. “Samsung Electronics has high competitiveness even if it goes to a dual stack because it has a single stack up to 128,” Han said emphasized, “It is different from other companies’ single dual stack. A manager emphasized that if two of the 3D NANDs from The company’s 128 layers, which are the single-stack product with the largest number of stacks, come together, become 256 layers. However, he added, “the actual number of stacks will be determined taking into account demand and conditions. From the market”.
According to Tech Insight data released by Samsung Electronics that day, the stacking height of Samsung Electronics 3D NAND flash is 15 ~ 30% lower than the competition. He stressed that the profit margin is high compared to competitors with such an efficient cell design.
CEO Han said: “Corona 19 accelerates digital transformation, and therefore the demand for memory will steadily increase.” .
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