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Samsung announced that it has expanded its DDR5 DRAM memory portfolio with the 512GB DDR5 module based on High-K Metal Gate (HKMG) process technology.
With more than double the performance of DDR4 at up to 7,200 megabits per second (Mbps), the new DDR5 will be able to orchestrate high-bandwidth and highly demanding workloads for supercomputing, artificial intelligence (AI) and learning. automatic (ML), as well as data analysis applications.
“Samsung is the only semiconductor company with memory and logic capabilities and the expertise to incorporate HKMG logic technology into memory product development,” said Young-Soo Sohn, vice president of the DRAM Memory Planning / Enablement Group at Samsung. Electronics.
“By bringing this type of process innovation to DRAM manufacturing, we are able to offer our customers high-performance yet energy-efficient memory solutions to power the computers needed for medical research, financial markets, autonomous driving, smart cities. and more”.
“As the amount of data to be moved, stored and processed exponentially increases, the transition to DDR5 comes at a critical tipping point for cloud data centers, networking and edge deployments,” said Carolyn Duran. , vice president and general manager of memory and I / O technology at Intel.
“Intel engineering teams are closely partnering with memory leaders like Samsung to deliver fast, low-power DDR5 memory that is performance optimized and compatible with our upcoming Intel Xeon Scalable processors, codenamed Sapphire Rapids. “.
Samsung’s DDR5 will use highly advanced HKMG technology that has traditionally been used in logic semiconductors. With the continuous reduction of DRAM structures, the insulation layer has become thinner, leading to a higher leakage current.
By replacing the insulator with HKMG material, Samsung’s DDR5 will be able to reduce leakage and reach new heights in performance. This new memory will also use approximately 13% less energy, making it especially suitable for data centers where energy efficiency becomes increasingly critical.
The HKMG process was adopted into Samsung’s GDDR6 memory in 2018 for the first time in the industry. By expanding its use in DDR5, Samsung is further consolidating its leadership in next-generation DRAM technology.
Leveraging silicon over (TSV) technology, Samsung’s DDR5 stacks eight layers of 16Gb DRAM chips to deliver the largest capacity of 512GB. TSV was first used in DRAM in 2014 when Samsung introduced server modules with capacities up to 256GB.
Samsung is currently testing different variations of its family of DDR5 memory products for customers to verify and ultimately certify against its cutting-edge products to accelerate AI / ML, exa-scale computing, analytics, networking and other workloads. data intensive.
