[ad_1]
© Samsung Electronics
Components | August 31, 2020
Samsung Electronics’ second production line in Pyeongtaek, Korea, has begun mass production of the industry’s first 16 gigabit (Gb) LPDDR5 mobile DRAM, using extreme ultraviolet (EUV) technology.
The new LPDDR5 mobile DRAM is being built on Samsung’s 3rd generation 10nm (1z) class process. “The 1z-based 16Gb LPDDR5 raises the industry to a new threshold, overcoming a significant development hurdle in scaling DRAM in advanced nodes,” says Jung-bae Lee, Executive Vice President of DRAM Product and Technology at Samsung Electronics, in a press release. . “We will continue to expand our premium DRAM line and exceed customer demands as we lead the growth of the overall memory market.” With an area of more than 128’900 square meters (more than 1.3 million square feet), which is equivalent to about 16 football fields, which makes Samsung’s Pyeongtaek Line 2 the production line of largest-scale semiconductors to date, according to the company. The new Pyeongtaek line will serve as the key manufacturing center for the industry, offering DRAM followed by next-generation V-NAND and foundry solutions. Based on the 1z compute node, Samsung’s new 16Gb LPDDR5 is the first memory to be mass produced using EUV technology. The company says it plans to further strengthen its presence in the flagship mobile device market throughout 2021 and also expand the use of its LPDDR5 offerings in automotive applications.
